6 kW Bidirectional, Insulated On-board Charger with Normally-Off GaN Gate Injection Transistors
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 6Language: englishTyp: PDF
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Authors:
Endres, Stefan; Sessler, Christoph; Zeltner, Stefan; Eckardt, Bernd (Fraunhofer Institute IISB, Erlangen, Germany)
Morita, Tatsuo (Panasonic Corporation, Osaka, Japan)
Abstract:
This paper describes a bidirectional insulated on-board charger (OBC) based on normally-off GaN gate injection transistors (GaN-GIT) and shows that, by using 600 V GaN GITs in a totem pole PFC together with a CLLC converter with variable turns-ratio, a complete bidirectional insulated 6 kW on-board charger, as shown in Fig. 1, can be realized in only 2 dm3. Besides the description of the topology, especially the modular buildup of the prototype will be shown, as well as measurements.