Suitable Turn-Off Strategies for IGBTs with a High Desaturation Current During Short Circuit Failures Detected with the 2D-Short Circuit Detection Method
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 7Language: englishTyp: PDF
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Authors:
Hain, Stefan; Bakran, Mark-M. (University of Bayreuth, Germany)
Abstract:
The 2D-short circuit detection method is one of the fastest fault detection methods for power semiconductors. It is able to detect a short circuit failure even before the collector current reaches its desaturation limit. But a fast fault detection is just one part of a reliable short circuit protection. It has to be combined with a fast reacting and suitable turn-off strategy in order to provide a working short circuit protection. Therefore, this paper presents the suitability of different turn-off strategies for short circuit events for IGBTs with a high desaturation current, detected with the 2D-short circuit detection method.