Robust SiC JBS Diodes for the Application in Hybrid Modules
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 6Language: englishTyp: PDF
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Authors:
Kranz, Lukas; Minamisawa, Renato Amaral; Knoll, Lars; Matthias, Sven; Mihaila, Andrei; Papadopoulos, Charalampos; Mesemanolis, Athanasios; Mengotti, Elena; Alfieri, Giovanni; Sundaramoorthy, Vinoth Kumar; Bianda, Enea; Rahimo, Munaf (ABB Switzerland Ltd, Switzerland)
Abstract:
We report on electrical characteristics and reliability tests of our newly developed 1.7 kV SiC JBS (Junction Barrier Schottky) diodes and their implementation into hybrid modules. Turn-off characteristics show that a current density of 1275 A/cm2 can be switched off safely in the SiC diodes. 1000 hours of THBHV-DC (Temperature Humidity Bias High Voltage Direct Current) tests at a voltage of 1360 V (80% nominal) have been passed without blocking degradation. To the best of our knowledge, this is the first report on SiC power devices that withstand THBHV-DC tests for 1000 hours. Finally, SiC diodes were implemented in a hybrid 1.7 kV 62Pak rated at 200 A, leading to a reduction in diode related switching losses by 85% when compared to the full Silicon reference module. Surge current measurements show that >4x nominal current can be handled safely by the SiC diodes in the module.