The Next Generation 4500 V / 3000 A BIGT Stakpak Modules
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 5Language: englishTyp: PDF
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Authors:
Dugal, Franc; Baschnagel, Andreas; Rahimo, Munaf; Kopta, Arnost (ABB Switzerland Ltd., Switzerland)
Abstract:
In this paper, we introduce the next generation Stakpak module employing 4500V BIGT chips which combine both IGBT and diode mode operation in a single structure. This newly developed chip has been optimized for hard switching applications, which together with the an improved Stakpak module layout yields the most powerful IGBT-based device up to date with a current rating of 3000A. One of the most important features of this device is its high surge current capability, which is achieved independently of the gate-driving conditions. The paper will cover the chip and module design aspects supported by a full range of static and dynamic results at module level.