An Advanced Si-IGBT Chip for Delivering Maximum Overall System Performance

Abstract:
The quest to push the boundaries of semiconductor performance has witnessed the development of several generations of Si-IGBT chip technologies. The electrical loss performance of each new generation Si-IGBT chip appears to be better than its predecessor, however an analysis reveals that the electrical loss performance of the conventional Si-IGBT device is reaching a kind of ‘saturation situation’ where no further substantial improvement can be obtained. Another feature of the conventional Si-IGBT chip is the trade-off between Eon and switching dv/dt due to which it is not possible to achieve the best switching dv/dt during operation without having to compromise on efficiency (and vice-versa). It is thus imperative to explore the Si-IGBT chip technology for developing a device which is capable of delivering overall maximum performance – highest efficiency and the best possible switching dv/dt. Furthermore, another aspect requiring re-consideration is the electrical performance versus short-circuit robustness trade-off in the conventional Si-IGBT chip design, and accordingly Mitsubishi Electric has designed and developed an advanced Si-IGBT chip which is capable of achieving short- circuit robustness and excellent efficiency.