Measurement Scheme to Model an SiC MOSFET for Simulating its Switching Behaviors
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 5Language: englishTyp: PDF
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Authors:
Yanagi, Tatsuya; Sakairi, Hiroyuki; Otake, Hirotaka; Kuroda, Naotaka; Nakahara, Ken (Rohm Co. Ltd., Japan)
Tanigawa, Hiroaki (Keysight Technologies, Japan)
Abstract:
The study discusses a measurement methodology to create a device model of an SiC metal–oxide–semiconductor field-effect transistor (MOSFET) to accurately reproduce its switching behaviors. The drain current is obtained as a function of the drain–source voltage in the operation area of the device using a double pulse test circuit that averts the measurement-driven heating the device. The parasitic capacitances are measured via S-parameters under on and off states. The experimental data are used to optimize the device model. The results indicate that the completed version sufficiently reproduces the on- and off-transient behaviors of the device.