A Performance Comparison of SiC Power Modules with Schottky and Body Diodes
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
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Authors:
Schmidt, Christopher; Roeblitz, Martin (SEMIKRON Elektronik, Germany)
Abstract:
For the design of SiC-MOSFET power modules, the selection of the right chipset is essential and needs to be chosen for every application individually to get the best performance. One of the major questions is the choice of the freewheeling diode, which can be either the integrated body diode or an additional Schottky diode. This paper discusses the advantages and disadvantages of both solutions based on detailed measurement results for two power classes. Mechanisms which have a significant influence on the conducting and switching-losses are investigated. Finally the impact on the output current capability of an inverter under typical operating conditions is shown.