System Level Comparison of Si IGBTs and SiC MOSFETs
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
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Authors:
Gant, Levi; Banerjee, Sujit; Zhang, Xuning; Sheh, Gin (Monolith Semiconductor, USA)
Lemmon, Andrew; Shahabi, Ali (The University of Alabama, USA)
Abstract:
This work demonstrates the system-level optimization opportunities that accompany the implementation of SiC MOSFETs as opposed to more traditional options such as Si IGBTs or Si MOSFETs. In order to illustrate the practical nature of these opportunities, this work presents a comprehensive study, via simulation, of necessary filter component sizes in a hard-switched DC-to-DC buck converter as a function of the converters switching frequency and power. To further validate the simulation results, a hard-switched 5 kW DC-to-DC buck converter prototype is presented. This prototype leverages SiC devices to reach a system level efficiency of nearly 99%, while maintaining a condensed volumetric size. Additionally, this converter is used as a platform to perform a head-to-head comparison of Si IGBTs and SiC MOSFETs in terms of overall system efficiency and achievable volumetric power density.