SiC Power MOSFET with Monolithically Integrated Schottky Barrier Diode for Improved Switching Performances
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 4Language: englishTyp: PDF
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Authors:
Dai, Xiaoping (Zhuzhou CRRC Times Electric, China)
Jiang, Huaping; Zheng, Changwei (Dynex Semiconductor Ltd., UK)
Ke, Maolong (Chinese Academy of Sciences, China)
Abstract:
A power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) featuring a monolithically integrated Schottky Barrier Diode (SBD) is proposed in this paper. The proposed structure is optimized to suppress the electric field in the gate oxide under reverse blocking state, which is beneficial to enhancing the gate oxide long term reliability. Both the static and switching characteristics are studied by TCAD simulation using Sentaurus. Compared to the conventional MOSFET-SBD pair, the proposed device shows not only lower switching loss but also smaller current overshoot during the turn on process.