Feasibility Study, Combining High-Power MOSFETs in a Power Module Using Advanced Thermal Management

Abstract:
In power electronic designs, the instantaneous chip temperature is of major importance to a power electronic application. MOSFETs, even more than IGBTs, benefit from lower junction temperatures. A 600 V CoolMOS C7 is set up as a prototype using a power module primarily used for IGBTs. The thermal investigation targets to predict the benefits that potentially arise from this approach. Furthermore, a comparison between a generic thermal interface material and the Infineon TIM material has been performed. The study is a basis for future development to enhance efficiency, especially in sensitive applications like solar inverters or highly integrated power electronics in electrical drives.