Cross Conduction of GaN HFETs in Half-Bridge Converters
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
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Authors:
Boecker, Jan; Kuring, Carsten; Dieckerhoff, Sibylle (Technische Universität Berlin, Germany)
Hilt, Oliver; Wuerfl, Joachim (FBH Ferdinand-Braun-Institut Berlin, Germany)
Abstract:
Cross conduction in GaN HFETs is particularly critical due to the high dvDS/dt and small gate-source capacitances in conjunction with moderate drain-gate feed-back capacitances. Therefore, the switching speed is limited in current devices, which leads to increased losses. In this work, the turn-on peak current and increased turn-on losses due to cross conduction are investigated for two normally-off GaN HEFTs in a half-bridge topology. It is shown that a lower turn-off gate driver voltage level reduces cross conduction and can minimize the total device losses, despite of higher dead time conduction losses.