Gate Driver IC for GaN GIT for High Slew Rate and Cross Conduction Protection
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
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Authors:
Cai, Aaron Qingwei; Carrera, Herreria Arnel; How, Sin Ban (Panasonic Industrial Devices Semiconductor Asia, Singapore)
Liter, Siek (Nanyang Technological University, Singapore)
Abstract:
This paper presents various gate drive methods to optimize the performance and overcome the challenges of high slew related issues. High drainsource voltage and current slew rates enable low switching losses and high frequency operation. However, it increases the chances of cross conduction. In this work, a driver IC was developed to drive the GaN GIT at high slew rates (~150V/ns) while having built-in active miller clamp and selfgenerated negative voltage rail for crossconduction protection. Experimental results showed that GaN GIT gate driver IC outperformed other methods by allowing faster slew rates and larger immunity to cross conduction.