Gate Drivers for Medium Voltage Applications
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 8Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Am, Sokchea; Lefranc, Pierre; Frey, David; Hanna, Rachelle; Sarrazin, Benoit (University Grenoble Alpes, G2Elab, France)
Abstract:
This paper proposes a design methodology to optimize gate drivers for power semiconductor modules (IGBTs, MOSFETs) for Medium Voltage (MV) converters. A signal transmission function and a power transmission function of gate drivers are presented in detail. For safety and long production life, these functions are required for high and very high galvanic insulation voltage capabilities. These insulations systems can be achieved by the help of the insulating material in a pot core planar transformer. Hence, to fulfill the final application, the study of the insulating dielectric materials is provided. Then, a gate driver with the power transmission function and the signal transmission function is provided and tested to validate the overall gate driver system.