Experimental Study of Si- and SiC-Based Voltage Source Inverters
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 7Language: englishTyp: PDF
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Authors:
Sobe, Klaus (Infineon Technologies Austria AG, Austria)
Brucchi, Fabio (Infineon Technologies Italia S.r.l., Italy)
Abstract:
This paper shows and compares the performance of hybrid three-level inverters realized with Silicon Carbide Trench MOSFETs and Schottky Barrier diodes as well as Silicon IGBTs. Possible improvements over well-established three-level, pure Silicon solutions are demonstrated using real measurement data. A short comparison with a two-level SiC MOSFET solution completes the paper. The Silicon devices used within the tests were TRENCHSTOP(exp TM) and TRENCHSTOP(exp TM) 5 IGBTs as well as Rapid and EMCON diodes. The Silicon Carbide devices were CoolSiC(exp TM) T-MOSFETs and Generation 5 diodes. All semiconductors were assembled in discrete packages.