A Technology Platform for Reverse-Conducting Integrated Gate Commutated Thyristors with 94 mm Device Diameter
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 5Language: englishTyp: PDF
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Authors:
Wikstroem, Tobias; Alexandrova, Maria (ABB Switzerland, Switzerland)
Abstract:
A new optimized technology platform was developed for Reverse-Conducting Integrated Gate Commutated Thyristors (RC-IGCTs). The new platform offers a larger active device area, a higher controllable current, an increased junction temperature as well as improved cooling compared to the previous platform. In this paper, we present the first RC-IGCTs based on the new platform. The devices were developed for two different voltage classes: 4500 V and 6500 V of maximal reverse voltage. The devices are optimized for a low switching frequency and are intended for use in Multi-Level Modular Converter (MMC) static synchronous compensators (STATCOMs).