GaN Gate Injection Transistor for Reliable Power Supply Solution

Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China

Proceedings: PCIM Asia 2017

Pages: 7Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Ban How, Howard Sin (Panasonic Industrial Devices Semiconductor Asia, Singapore)

This paper reviews the robustness of the GaN Gate Injection Transistor (GaN GIT) demonstrated through different reliability testing methods. Besides conventional tests applied for Si based on JEDEC requirement, additional tests beyond JEDEC include dynamic high temperature operating life test and short circuit capability test are performed on the GaN GIT. Examples of actual implementation on switching power system applications and devices enabling the innovation will be described. Recent advancements in GaN GIT technology include Through Recessed and Regrowth Gate (TRRG) technology for realizing process stability and 1.7 kV vertical GaN GIT on bulk GaN substrates are also presented.