7th Generation IGBT Modules Integrating Converter Inverter Brake
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Hu, Bo; Ma, Xiankui; Song, Gaosheng (Mitsubishi Electric & Electronics (Shanghai) Co., Ltd, China)
The paper introduces a new type IGBT (Insulated Gate Bipolar Transistor) module integrating CIB (Converter Inverter Brake) circuit. The new generation IGBT modules use the 7th generation chip technology and novel assembling structure to assure low power loss, low thermal rise and high reliability. Meanwhile, abundant products line-up can meet various application fields and various power ratings. What’s more, the comparison with Mitsubishi Electric 6th generation IGBT modules was showed. At last, the feasibility of 37 kW general purpose inverter by using 1200 V / 150 A CIB IGBT module was discussed.