Influence of parasitic resistance on current sharing of IGBT module
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Xie, Longfei; Ye, Na; Cao, Lin; Yu, Kai (CRRC Yongji Electric Co., Ltd, China)
In order to get the high current conducting capability, multiple IGBT chips are connected in paralleled in an IGBT Module. However, the current flowing the IGBT chips is different with the influence of IGBT Module parasitic parameter. If the current difference is too large, it will affect IGBT Module reliability. In this paper, numerical simulation is used to investigate the relationship of current sharing with the IGBT Module parasitic resistance. An equipment circuit based on chip and DBC Layout is constructed. Also, the design method is proposed to reduce the impact of parasitic resistance on current sharing.