Evaluating Self-commutated Reverse Conduction Characterization of Enhancement-Mode GaN HEMT for Application
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Qin, Haihong; Zhang, Ying; Wang, Dan; Fu, Dafeng (Nanjing University of Aeronautics and Astronautics, China)
Zhao, Chaohui (Shanghai DianJi University, China)
Enhancement-mode GaN switches has been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. Self-commutated reverse conduction is a very important characteristic of enhancement-mode GaN HEFT, especially for synchronous rectification topologies. This paper introduces the new commercial enhancementmode GaN HEMT and its self-commutated reverse conduction characteristic. To compare three schemes: only an eGaN, only a SiC SBD, eGaN with an anti-parallel SiC SBD respectively, a DPT circuit is designed to analyse the influence of different schemes on switching characteristics and power losses of eGaN HEMT.