Upgrading of output power by newly developed 7th generation IGBT and package technologies
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Yoshida, K.; Yoshiwatari, S.; Sawada, M.; Onozawa, Y.; Isozaki, M.; Okita, S.; Ikawa, O. (Fuji Electric Co., Ltd., Nagano, Japan)
Li, J.; Chen, S. (Fuji Electric Co., Ltd., China)
In recent years, significance of semiconductor module for power conversion systems is increasing. Especially higher output power with existing housing size of power module is important to realize further downsizing or rating upgrade for its systems. For realizing higher output, advanced technologies not only for semiconductor devices but also for packaging technologies are necessary because thermal management to handle higher power density of power module is one of the key factors to realize the target. This report is focusing one of the newly developed products family of 7th generation IGBT module so called 'Dual XT' which housing is widely used in worldwide. Advanced technologies in this paper achieve over 30% upgrading of current rating of the product which can create significant benefit for power conversion systems.