94 mm Reverse-Conducting IGCT for High Power and Low Losses Applications
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Wikstroem, Tobias; Alexandrova, Maria; Kappatos, Vasilis; Winter, Christian; Tsyplakov, Evgeny; Chen, Makan (ABB Switzerland Ltd, Semiconductors, Switzerland)
Mohan, Madhan (ABB Global Industries and Services Private Ltd, India)
A new technology platform for Reverse-Conducting Integrated Gate Commutated Thyristors (RC-IGCTs) has been developed to meet the ever increasing demand for higher power capability coupled with lower operating losses. The new platform offers more device active area, larger controllable current, higher junction temperature and better cooling than the existing platform. The first product for 4.5 kV maximal voltage is optimized both for medium switching frequency application, such as MVD and wind power converters, and low switching frequency intended for use in Multi-Level Modular Converter (MMC) e.g. Static Synchronous Compensators (STATCOMs) and possibly HVDC as demonstrated by simulation, such IGCT enables the design of 3-level MVD converters with a power rating of 5 MW.