New Concept Package with 1st Generation Trench Gate SiC MOSFETs
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Iwasaki, Yoshinori; Chounabayashi, Mikiya; Nakazawa, Masayoshi; Iwamoto, Susumu; Oonishi, Yasuhiko; Hori, Motohito; Kakiki, Hideaki; Ikawa, Osamu (Fuji Electric Co., Ltd., Japan)
Li, Jun (Fuji Electric (China) Co., Ltd., China)
Current market requirements are trending towards further downsizing and increased efficiency of power conversion systems. For this reason, enhanced power density of the power modules will be critical in order to respond to the evolving needs of the market. In this paper, electrical characteristics for all-SiC modules with the 1st generation trench gate SiC MOSFETs and new concept package are presented. In addition, it was demonstrated that 1 rank extension for inverter capacity could be accomplished by applying all-SiC modules against conventional Si modules. Therefore, these modules will realize further downsizing and higher efficiency of power conversion systems.