How to apply the better performance of SiC modules
Conference: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/27/2017 - 06/29/2017 at Shanghai, China
Proceedings: PCIM Asia 2017
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Ma, Xiankui; Song, Gaosheng; Zhang, Xing (Hefei University of Technology, Mitsubishi Electric Joint Laboratory, China)
Li, Jianfei (Sineng Electric Co., Ltd., Wuxi, China)
Comparing to Si devices, SiC devices has better performance on both conduction power loss and switching power losses. And there many types of SiC power devices, including discrete MOSFET, SiC MOSFET module and SiC IPMs. It will be helpful to select a proper power module for our application if we could have a good understanding on all these kinds of SiC modules. This paper will introduce these SiC modules and explain how to realize a better system design by applying using the better performance of SiC modules.