A Wire-bond-less 10 kV SiC MOSFET Power Module with Reduced Common-mode Noise and Electric Field

Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2018

Pages: 7Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

DiMarino, Christina; Xu, Yue; Boroyevich, Dushan; Burgos, Rolando (Center for Power Electronics Systems Virginia Tech, USA)
Mouawad, Bassem; Li, Ke; Johnson, Mark (University of Nottingham, UK)

Wide-bandgap devices offer many benefits. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. However, these features can result in premature dielectric breakdown, higher voltage overshoots, high-frequency current and voltage oscillations, and greater electromagnetic interference. In order to mitigate these side effects and thus fully utilize the benefits of these unique devices, advanced module packaging is needed. This work proposes a power module package with a small footprint (68 mm × 83 mm), low gate- and power-loop inductances (4 nH), increased partial discharge inception voltage (53 %), and reduced common-mode current (90 %).