Enhanced Breakdown Voltage and High Current of All-SiC Modules with 1st Generation Trench Gate SiC MOSFETs

Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2018

Pages: 6Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Hori, Motohito; Hinata, Yuichiro; Taniguchi, Katsumi; Nakazawa, Masayoshi; Ikeda, Yoshinari; Yamazaki, Tomoyuki (Fuji Electric o., Ltd., Japan)
Heinzel, Thomas (Fuji Electric Europe, Germany)

SiC devices are expected to be used in fields that require in high voltage fields from 3kV to 10kV such as railways and high reliability such as hybrid vehicles and electric vehicles. In order to expand the application range of Silicon Carbide (SiC), SiC modules with the 1st generation trench gate SiC MOSFETs from small capacity to large capacity were developed. This paper presents the packaging technologies for enhanced breakdown voltage and high current of All-SiC modules.