Effects of a SiC TMOSFET Tractions Inverters on the Electric Vehicle Drivetrain
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Nisch, Alexander; Kloeffer, Christian; Weigold, Joerg; Wondrak, Wolfgang (Daimler AG, Research and Development, Hanns-Klemm Straße 45, 71034 Böblingen, Germany)
Schweikert, Christian; Beaurenaut, Laurent (Infineon AG, Research and Development, Am Campion 1-12, 85579 Neubiberg, Germany)
Due to the constantly increasing demand for the electrical range and to the restricted installation space, the request to the energy efficiency of a traction inverter will increase. Silicon carbide MOSFETs are considered as the most promising semiconductor devices for future traction inverter applications. In this paper we discuss the potential and challenges of a three-phase voltage-source-inverter based on trench SiC MOSFETs (SiC TMOSFET) under automotive constraints, consid-ering the complete drivetrain. To achieve the optimum efficiency the switching behaviors of different gate controls are investigated. Based on the results, a significant efficiency improvement for an electric vehicle application is possible, this could be confirmed by measurements.