A 3.3 kV / 800 A Ultra-High Power Density SiC Power Module
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Ishigaki, Takashi; Hayakawa, Seiichi; Murata, Tatsunori; Tabata, Toshihito; Asaka, Katsuyuki; Kinoshita, Koyo; Oda, Tetsuo; Yasui, Kan; Morita, Toshiaki; Kawase, Daisuke; Takayanagi, Yuji; Yamada, Renichi; Saito, Katsuaki (Hitachi Power Semiconductor Device Ltd., Japan)
Masuda, Toru; Miki, Hiroshi; Sagawa, Masakazu; Onose, Hidekatsu; Konishi, Kumiko; Fujita, Ryusei; Matsushima, Hiroyuki; Sato, Shintaroh; Shima, Akio (Research & Development Group, Hitachi Ltd., Japan)
A 3.3 kV/800 A diode-less (D-less) SiC power module has been developed adopting the next High Power Density Dual (nHPD2) package. The ultra-high power density value of 37.7 kVA/cm2 is realized by fulfilment with only SiC-MOSFETs. Furthermore, as a countermeasure for “bipolar degradation” issues related to body diodes in the SiC-MOSFET structure, a high throughput screening process is deployed. The low loss and high reliability characteristics of the D-less SiC module are set out herein.