Applying the 2D-Short Circuit Detection Method to SiC MOSFETs including an advanced Soft Turn Off
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Hofstetter, Patrick; Hain, Stefan; Bakran, Mark-M. (University of Bayreuth, Germany)
To address the problem of small short circuit withstand times of SiC MOSFETs, this paper presents a short circuit protection, which detects the fault close to the earliest time possible and turns off the device safely. For the detection, the 2D-short circuit detection method [1, 2] was adapted to SiC MOSFETs. As SiC MOSFETs have to be turned off softly, a turn-off strategy is shown which is able to turn the device off during a short circuit type 1 and a short circuit type 2 in an optimized way.