Performance Comparison Between Voltage Source and Current Source Gate Drive Systems
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Frank, Wolfgang (Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany)
Zheng, Ziqing (Infineon Technologies China, No. 7&8, Lane 647, Song Tao Road, Zhang Jiang Hi-Tech Park, Pudong, China)
This paper presents the comparison of two gate driver boards, which are operated with the same power module. One solution is realized using a gate current control driver IC, while the other solution uses a conventional gate driver IC with external buffer. The power module is a 1200 A / 1200 V module designed for high power applications. The paper compares the functionality of both boards and analyses the switching performance. As comparative condition, the turn-on collector-emitter slew rate of dvCE/dt = 5 V/ns is used. Particular interest is in the evaluation of the turn-on energy.