Floating Gate Method to Protect IGBT Module from Explosion in Traction Converters

Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2018

Pages: 7Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Bianda, Enea; Sundaramoorthy, Vinoth Kumar (ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland)
Knapp, Gerold; Heinemann, Alexander (ABB Switzerland Ltd, Business Unit Power Conversion, Austrasse, 5300 Turgi, Switzerland)

A method using floating gate is illustrated to avoid explosion of IGBT modules in converters by redirecting the fault current through good chips in the module and reducing the current concentration in the faulty chip. The proposed method was able to avoid explosion of various tested IGBT modules at a short circuit energy of 7.2 kJ and/or 16.2 kJ in a test set up.