High Dynamic Stress on SiC Trench MOSFET Body Diodes and their Behaviour
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Maerz, Andreas; Bertelshofer, Teresa; Bakran, Mark-M. (University of Bayreuth, ZET, Germany)
In this paper state-of-the-art SiC trench MOSFET’s body diodes are investigated under high dynamic stress during reverse-recovery and in parallel configuration of a power module. Measurements on SiC MOSFET body diodes under high dynamic stress show the effect of a clamping of the drainsource- voltage together with a generation of additional charge carriers at turn-off. This paper analyses the cause of this effect and its dependence on switching speed and commutation inductance.