Dynamic Current Sharing and Gate Feedback During Turn-OFF of Paralleled IGBTs
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Schrader, Robin; Muenster, Patrick; Eckel, Hans-Guenter (University of Rostock, Germany)
Current redistributions occur during turn-OFF of paralleled IGBTs. This effect has been observed by measurements and simulations before. Though, this paper explains the physical redistribution mechanism in detail. The process of this redistributions is defined by the electron and hole currents in the IGBTs, their gate- and collector-emitter voltages and by their influence on each other. The redistributions end, when the collector-emitter voltages reach the dc-link voltage.