Switching Pattern and Performance Characterization for “SiC+Si” Hybrid Switch
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Qin, Haihong; Xiu, Qiang; Wang, Dan; Wang, Shishan (Nanjing University of Aeronautics and Astronautics, Nanjing, China)
Zhao, Chaohui (Shanghai DianJi University, Shang hai, China)
This paper investigates the characteristics of SiC MOSFET and Si IGBT hybrid switch. Based on the characteristics comparison of SiC MOSFET and Si IGBT, the optimized switching patterns of hybrid switch is proposed. The current sharing inside the hybrid switches is analyzed in steady state conditions by modelling .The switching process of hybrid switch is analyzed and verified by double pulse test. The experimental results show that the optimized hybrid switch can expand the capacity of SiC MOSFET and reduce the switching loss of Si IGBT.