S-Parameter Characterization of GaN HEMT Power Transistors for High Frequency Modeling

Abstract:
Gallium Nitride (GaN) power devices that have been developed these recent years are ideal candidates for high frequency power conversion, leading to a reduction of size and weight of power converters. The design of these converters is based on simulations which require accurate device models valid in a wide frequency band. This paper presents the characterization of a packaged GaN power transistor using radiofrequency techniques such as S-parameters and pulsed current-voltage measurements. The objective is to propose a modeling method that will be used when the GaN transistor model is not given. A model based on the characterization results is then implemented in a simulation environment and data are compared to experimental results.