S-Parameter Characterization of GaN HEMT Power Transistors for High Frequency Modeling
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Pace, Loris; Videt, Arnaud; Idir, Nadir (Laboratory of Electrical Engineering & Power Electronics (L2EP) / Institute of Electronics, Microelectronics & Nanotechnologies (IEMN) UMR CNRS 8520, University of Lille, France)
Defrance, Nicolas; Dejaeger, Jean-Claude (University of Lille – IEMN, France)
Gallium Nitride (GaN) power devices that have been developed these recent years are ideal candidates for high frequency power conversion, leading to a reduction of size and weight of power converters. The design of these converters is based on simulations which require accurate device models valid in a wide frequency band. This paper presents the characterization of a packaged GaN power transistor using radiofrequency techniques such as S-parameters and pulsed current-voltage measurements. The objective is to propose a modeling method that will be used when the GaN transistor model is not given. A model based on the characterization results is then implemented in a simulation environment and data are compared to experimental results.