650 V E-Mode GaN HEMT Switching at 1 MHz for Travel Adapter Applications
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Starks, Ann; Chen, Zhiyang; Cargile, Mike (ON Semiconductor, USA)
This paper provides important design considerations and performance results for an elevated-frequency travel adapter application using a 650V E-GaN transistor. Performance, circuit functionality, and design challenges are presented for a 65W QR flyback travel adapter application. Steps taken to elevate the switching frequency of the adapter are addressed, and the ON Semiconductor 650V Enhancement-mode gallium nitride (E-GaN) high-electron mobility transistor (HEMT) in-circuit performance is presented.