Power p-GaN HEMT Under Unclamped Inductive Switching Conditions
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Marek, Juraj; Satka, Alexander; Jagelka, Martin; Chvala, Ales; Pribytny, Patrik; Donoval, Martin; Donoval, Daniel (Slovak University of Technology in Bratislava, Slovakia)
In this paper we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and discussed. It is experimentally confirmed that p-GaN HEMT devices exhibit intrinsic UIS capability. Influence of different inductances as well as different supply voltage is also analyzed.