Analysis of 1200 V Si-SiC-Hybrid Switches for Resonant Applications
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Meissner, Michael; Fahlbusch, Sebastian; Luethke, Daniel; Hoffmann, Klaus F. (Helmut Schmidt University, Faculty of Electrical Engineering, Department of Power Electronics, Germany)
Hybrid switches consisting of a silicon IGBT and a silicon carbide MOSFET are an approach for power loss reduction in resonant topologies. Potentials and performance are analysed and discussed.