Sintering Cu Paste Die-Attach for High TJ Power Devices
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 3Language: englishTyp: PDF
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Authors:
Nagao, Shijo; Gao, Yue; Shimoyama, Akio; Suganuma, Katsuaki (Institute of Scientific and Industrial Research, Japan)
Yamauchi, Shinichi; Sakaue, Takahiko; Kamikoriyama, Yoichi (Mitsui Mining & Smelting, Japan)
Abstract:
A sinter joining method with micron-submicron me tal Cu particles is proposed for high TJ semicond uctor die-attach such as application in emerging wide-bandgap high-power devices. The results sh ow that high bond strength exceeding 30 MPa ca n be realized by bonding at 300 °C in N2 gas und er low pressure. The obtained high strength in the mild bond-process conditions promises the opport unity of thermo-stable die-attach technology requi red for power device packaging. Die-attach for act ual SiC device was also prepared followed by vari ous environmental aging tests