New Developed 3.3 kV / 1500 A IGBT Module
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Li, Daohui; Qi, Fang; Packwood, Matthew; Mumby-Croft, Paul; Islam, Ariful; Wang, Yangang (Dynex Semiconductor Ltd, UK)
Zhou, Wei; Luo, Haihui; Dai, Xiaoping; Liu, Guoyou (CRRC Times Electric Co. Ltd, Zhuzhou, China)
High power IGBT module for 190mmX140mm footprint with different voltage and current ratio for 3.3kV, 4.5kV, and 6.5kV IGBT module are widely utilised in traction market, industrial market . There are always plenty of investigation and researches ongoing to improve the electrical performance, long term reliability for this type of IGBT modules. One set of new internal design and assembly process have been utilised into the high power IGBT module together with improved IGBT and FRD chip sets [2-4]. There are several key improvements for the module: (a) 3D busbar-substrate assembly has shown 40% less inductance than the traditional 2D structural busbars; (b) 12.5% reduction of IGBT’s thermal resistance and 25% reduction of FRD’s thermal resistance has been achieved, (c) FRD performance has been enhanced to provide~4MW power, (d) ohmic losses from both metal busbars and metal layer of substrates are much lower for the new designed module package, and (e) excellent partial discharge capability for the module. For the new developed module, the pre-bent 3D busbars and ultrasonic welding (USW) process provide better reliability than the usual busbars based on soldering process with stronger shear test force. The anti-explosive capability of module has been improved and verified via extreme short-circuited condition test.