Integrated Cooling Channels in Direct Bonded Copper Substrate for Silicon Carbide MOSFETs
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Stippich, Alexander; Battefeld, Maximilian L. J.; Doncker, Rik W. De (Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Aachen, Germany)
A cooling structure etched into a direct bonded cop- per substrate is examined for new wide band gap silicon carbide devices. Simulations are carried out for an initial setup to test the feasibility of such a cooling structure. For further optimization, simula- tions with different material combinations and ge- ometry parameters are conducted for silicon car- bide devices. An optimized prototype is manufac- tured for experimental verification and shows good agreement with the simulations. It is demonstrated that integrated micro-channel structures etched into direct copper substrates provide a compact and ef- ficient cooling solution for power semiconductors.