Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs

Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2018

Pages: 8Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Chvala, Ales; Marek, Juraj; Cernaj, Lubos; Pribytny, Patrik; Satka, Alexander; Donoval, Daniel (Slovak University of Technology in Bratislava, Ilkovičova 3, 812 19 Bratislava, Slovakia Republic)
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (IMEC, Kapeldreef 75, 3001 Heverlee, Belgium)

Presented work introduces an advanced methodology for fast 3-D TCAD electrothermal simulation for analysis of power devices. The proposed methodology allows fast simulation of complex systems from individual semiconductor layers at a frontend up to package and cooling assemblies at a backend. More accurate electrothermal model of power high-electron mobility transistors (HEMTs) is proposed and validated. The influence of the metallization layer geometry on the electrothermal behavior of the multifinger power HEMT is studied.