Thermal Characteristics Evaluation of Wide Band Gap Power Devices

Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2018

Pages: 3Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Nagao, Shijo; Suganuma, Katsuaki (ISIR, Osaka University, Japan)
Funaki, Tsuyoshi (Faculty of Engineering, Osaka University, Japan)
Hirao, Kiyoshi (AIST Chubu, Japan)
Susaki, Junichi (Denka, Japan)
Sato, Hideki (Japan Fine Ceramic Association, Japan)

To allow higher junction temperatures than those of Si, emerging wide band gap semiconductors like SiC or GaN requires advanced packaging technologies suitable for high power modules. Hence thermal property evaluations of various packaging materials and assembled package structures are required for optimized thermal management of module designs. Here we discuss three methods of thermal measurements useful for characterizations, optimization of module design, and reliability investigations for various packaging materials.