Three-Level-Gate-Driver to Run Power Transistors in the Saturation Region for Junction Temperature Control
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Ruthardt, Johannes; Fischer, Manuel; Felix Woelfle, Julian; Troester, Nathan; Roth-Stielow, Joerg (Institute for Power Electronics and Electrical Drives, University of Stuttgart, Germany)
One of the main influencing factors on reliability and lifetime of power semiconductor devices is the thermal stress induced by load alternation. Junction temperature control systems are able to reduce the thermal stress. To control the junction temperature an option to influence the power losses of the power semiconductor devices is required. The proposed three-level-gate-driver offers the option to run power transistors in the saturation region and therefore to produce additional losses in order to control the junction temperature.