650 V Silicon Carbide MOSFETs in Totem-Pole Bridgeless PFC Design Achieves High Efficiency (80+ Titanium) without adding Complexity and Cost
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Salman, Adil; Ayerbe, Edgar; Solovey, James; Moxey, Guy; Ryu, Sei-Hyung; Barkley,Adam (Wolfspeed, A Cree Company, 3028 E Cornwallis Rd, Durham, NC 27709, USA)
This paper will illustrate the performance benefits of Wolfspeed’s 650 V, 60 mOmega, (C3MTM) SiC MOSFET (P/N: C3M0060065J) designed by using the latest advances in SiC MOSFET technology. This newly designed SiC MOSFET offers low body diode reverse recovery, high blocking voltage and low on-state resistance over temperature range. This paper will also cover the application of Wolfspeed’s 650 V, 60 mOmega, (C3MTM) SiC MOSFET (P/N: C3M0060065J) in low inductance package (TO-263-7) in the design of a bridgeless totempole PFC system that, when combined with DC/DC circuit, can achieve system level efficiency suitable for 80+ Titanium standard. Experimental results of the bridgeless totem-pole PFC topology yield a peak efficiency > 98.37%, THD < 5%, and higher power density than existing silicon 80+ platinum solutions with all at an equivalent or less EBOM cost.