Replacing Si-IGBTs with SiC-MOSFETs in Low Voltage Grid Converters
Conference: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/05/2018 - 06/07/2018 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2018
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Kaufmann-Buehler, Marius; Just, Hendrik; Paluch, Michael; Dieckerhoff, Sibylle (Technical University of Berlin, Germany)
For low voltage, medium power grid converters interfacing renewable energy sources (RES), two competitive converter technologies using either well established Silicon (Si)-IGBTs or new Silicon- Carbide (SiC)-MOSFETs are available. Introducing a new technology like SiC usually requires new, optimized designs to fully benefit from the semiconductors’ properties. However, for a direct comparison of the two technologies, two available power modules using the same package are investigated in a 3-phase converter, minimizing the effort associated with the replacement of IGBTs by SiC MOSFETs. This work presents a comparison of the converter efficiencies in different operation scenarios. Furthermore, it shows how filter effort and size can be reduced by operating at higher switching frequencies.