Low power loss level-shifter-based gate driver ICs enable high-frequency switching
Conference: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2018 - 06/28/2018 at Shanghai, China
Proceedings: PCIM Asia 2018
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Song, Jinsheng (Infineon Technologies Americas Corp., USA)
In the power electronics field, high switching frequency can offer certain benefits for applications and systems. However, it will increase the power loss of the driver IC. To achieve high switching frequency, a new driver IC technology is required. Infineon SOI technology is one of the key enablers for level-shifter-based gate driver ICs, which provide low power loss, good noise immunity and high reliability. This paper presents the advantages of Infineon SOI gate-driver technology, and its benefits for applications.