High Performance 2nd Generation Trench Schottky Diodes for Switch Mode Power Supplies
Conference: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2018 - 06/28/2018 at Shanghai, China
Proceedings: PCIM Asia 2018
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Hu, Aibin (WeEn Semiconductors, China)
Huang, Ed (WeEn Semiconductors, UK)
Schottky diodes are widely used as hyperfast rectifiers in modern switched mode power supplies. Recently, we have brought to market our 2nd generation (G2) Schottky diodes, which employ a field-relieving trench cell structure. Compared with our 1st generation (G1) planar Schottky diodes, the 2nd generation achieves superior performance in reduced on-state and switching losses through optimized use of Trench cells. The diode’s avalanche capability is also enhanced, giving it high ruggedness under various surge conditions. The 2nd generation Schottky diodes can find applications in many different converter topologies, such as fly-back, LLC and other circuits.