Challenging the 2D-Short Circuit Detection Method for SiC MOSFETs
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 8Language: englishTyp: PDF
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Authors:
Hofstetter, Patrick; Bakran, Mark-M. (University of Bayreuth, Center of Energy Technology (ZET), Germany)
Abstract:
After proving the potential of the 2D-short circuit detection method for SiC MOSFETs in the preceding work [1], this paper aims to test worst case application conditions and to further develop the protection system. Besides investigations on temperature influences and low inductive setups, it is shown how to cope with oscillations on the drain current with different circuit extensions. These may even occur during conductive state, due to the switching of adjacent phases.