New 950-V IGBT and diode technology integrated in a low-inductive ANPC topology for solar applications
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 8Language: englishTyp: PDF
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Authors:
Mueller, Christian R.; Schittler, Andressa C. (Infineon Technologies AG, Max-Planck-Straße 5, 59581 Warstein, Germany)
Laven, Johannes G. (Infineon Technologies AG, Am Campeon 1-15, 85579 Neubiberg, Germany)
Abstract:
This paper presents the new 950-V IGBT and diode technology. The IGBT structure is based on a micro-pattern trench cell concept that provides strongly reduced static losses and/or significantly lowered switching losses compared to typical 1200-V technologies. By analyzing the interaction of application requirements and power-module design, consequences for application and optimization paths for power modules are derived. Optimized power-module design and usage of 950-V technology enable the implementation of a fully integrated 1500-V ANPC topology with a nominal current of 400 A and a low stray inductance of only 15 nH in the recently released baseplate-less Easy3B package.