Short Circuit Detection Methods for Silicon Carbide (SiC) Power Semiconductors
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 7Language: englishTyp: PDF
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Authors:
Person, Jonas; Andresen, Markus; Liserre, Marco (Christian-Albrechts-Universität zu Kiel, Chair of Power Electronics, Germany)
Rettmann, Tim; Muehlfeld, Ole (Danfoss Silicon Power GmbH, Germany)
Abstract:
The use of Silicon Carbide (SiC) power semiconductors presents an attractive solution for increasing the efficiency and the power density of power converters. However, the capability to withstand a short circuit represents a challenge, because of higher current density and smaller chip size compared to Si-based power semiconductors with similar rating. Therefore, the time to detect and interrupt a short circuit is shorter and requires a fast detection and switch off of a short circuit current. In this work, short circuits detection methods for SiC MOSFETs are compared and a desaturation detection is developed and validated experimentally on a specially built SiC MOSFET module.